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Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Electrochemical Charge Transfer to Diamond and Other Materials
- Vidhya Chakrapani, John C. Angus, Kathleen Kash, Alfred B. Anderson, Sharvil Desai, Gamini Sumanasekera
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1203 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1203-J07-01
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- 2009
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The oxygen redox couple in adsorbed water films acts as an “electrochemical ground” that tends to pin the Fermi level in solids at the electrochemical potential of the redox couple. We discuss this effect on the conductivity of diamond; the conductivity type of sp2-based carbons including single-walled, semiconducting carbon nanotubes and graphene; the photoluminescence of GaN and ZnO; and the contact charging of metals.
Electrochemical Charge Transfer to Diamond
- Vidhya Chakrapani, John C. Angus, Alfred B. Anderson, Gamini U. Sumanasekera
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- Journal:
- MRS Online Proceedings Library Archive / Volume 956 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0956-J15-01
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- 2006
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Electrochemically mediated charge transfer has been primarily studied by its effect on the surface conductivity of diamond. In this paper we show that the effect is not restricted to diamond, but may occur in other material systems as well, for example, semiconducting single-walled carbon nanotubes and gallium nitride.
Applications of Diamond Thin Films in Electrochemistry
- Greg M. Swain, Alfred B. Anderson, John C. Angus
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- Journal:
- MRS Bulletin / Volume 23 / Issue 9 / September 1998
- Published online by Cambridge University Press:
- 29 November 2013, pp. 56-60
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- September 1998
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Electrochemical reactions typically involve electron transfer between an electrode and a dissolved chemical species at a solid-electrode/liquid-electrolyte interface. Three broad classes of electrochemical applications may be identified: (1) synthesis (or destruction), in which an applied potential is used to bring about a desired chemical oxidation or reduction reaction; (2) analysis, in which the current/potential characteristics of an electrode are used to determine the type and concentration of a species; and (3) power generation. These broad types of applications require stable, conductive, chemically robust, and economical electrodes. Diamond electrodes, fabricated by chemical vapor deposition, provide electrochemists with an entirely new type of carbon electrode that meets these requirements for a wide range of applications.
The first reports of electrochemical studies using diamond were in the mid-1980s. During the past several years, the field has attracted increasing attention. This review summarizes the electrochemical properties of diamond that make it a unique electrode material and that distinguish it from conventional carbon electrodes.
Boron-Doped Diamond Films for Electrochemical Applications
- Heidi B. Martin, Bridget A. Smith, John C. Angus, Uziel Landau, Alfred B. Anderson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 555 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 217
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- 1998
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Diamond electrodes possess unique chemical stability, a very wide potential window of water stability, and low background currents. These properties give rise to numerous possible applications, for example, electrosynthesis and electrodestruction reactions at extreme potentials and environmental conditions and as a sensor electrode in aggressive environments. Furthermore, the study of semiconducting diamond electrodes promises to lead to greater understanding of the surface chemistry of diamond and of electronic levels and surface states in doped diamond. In this paper the reactivity of diamond electrodes and their use in a molten salt environment, as a sensor element, and for characterizing diamond are discussed.
The migration of interstitial H in diamond and its pairing with substitutional B and N: Molecular orbital theory
- S.P. Mehandru, Alfred B. Anderson
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- Journal:
- Journal of Materials Research / Volume 9 / Issue 2 / February 1994
- Published online by Cambridge University Press:
- 03 March 2011, pp. 383-395
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- February 1994
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We present results of atom superposition and electron delocalization molecular orbital (ASED-MO) calculations of interactions of interstitial H with substitutional B and N in diamond. Nearest-neighbor and next-nearest-neighbor C atoms were relaxed in geometry depending on the cluster size, XC34H36 or XC70H60, respectively, where X = B or N and the H atoms saturate the surface dangling radical orbitals of the models. A small Jahn-Teller distortion occurs for interstitial B, a shallow acceptor which, in the B− state, sits in a tetrahedral lattice site. For interstitial N distortions are large, with a long C-N distance which stabilizes a ŝ∗ orbital that would otherwise be in the conduction band. This orbital has one electron in it and has its greatest amplitude on C; the bonding counterpart has its greatest amplitude on N and is similar to the N lone-pair orbital in amines. The calculations indicate that N is a deep donor and N+ relaxes to the tetrahedral lattice site. Interstitial H is a mid-band-gap donor and is possibly also an acceptor with a high 1.9 eV calculated activation energy barrier to migration. Interstitial H+ is expected to be very mobile, with a migration barrier of 0.1 eV. H− is predicted to be relatively immobile with an activation barrier for migration of 2.5 eV. The mobility of bond-inserted H around B in BH pairs should be high, with a calculated activation energy of 0.13 eV, but for N the comparable process has an activation energy of 2.50 eV. In NH pairs the interstitial H has formed a bond with the radical orbital on the C, so donation would be from the lone-pair orbital on N, which lies deep in the band gap; hence, the donor property is passivated.
Hydrogen binding and diffusion in diamond
- S.P. Mehandru, Alfred B. Anderson, John C. Angus
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- Journal:
- Journal of Materials Research / Volume 7 / Issue 3 / March 1992
- Published online by Cambridge University Press:
- 31 January 2011, pp. 689-695
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- March 1992
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We have investigated the binding and diffusion pathways for atomic hydrogen in diamond using the semiempirical atom superposition and electron delocalization molecular orbital (ASED-MO) theory. The bond-centered site has been found to be more stable than the tetrahedral and hexagonal interstitial sites due to the formation of a low-lying band-gap orbital which takes the promoted electron. A second hydrogen binds even more stably to the nearby antibonding site with additional stabilization of the now doubly occupied band gap orbital. The bond-centered hydrogen is predicted to migrate along the high-density (110) planes in the diamond lattice with an activation barrier of 1.9 eV. A carbon atom vacancy is found to attract interstitial H which bind to dangling orbitals on the surrounding C atoms. These bond strengths decrease as up to a maximum of four H atoms enters the vacancy. A hydrogen atom in a vacancy is found to increase the activation energy for vacancy migration.
Adsorption and bonding of C1Hx and C2Hy on unreconstructed diamond(111). Dependence on coverage and coadsorbed hydrogen
- S. P. Mehandru, Alfred B. Anderson
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- Journal:
- Journal of Materials Research / Volume 5 / Issue 11 / November 1990
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2286-2295
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- November 1990
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The adsorption and bonding of CH3, CH2, CH, C2H, and C2H2 fragments to clean and hydrogenated diamond(111) surfaces are investigated in the framework of the atom superposition and electron delocalization molecular orbital method. Low coverage calculations are performed using large cluster models for the surfaces, and high coverages are examined with band calculations on thick two-dimensional slabs with every surface carbon covered by a hydrocarbon fragment (i.e., 1:1 surface coverage). For low coverage adsorption on clean and H-covered surfaces the adsorption energies are in the order C2H>CH ≃ CH2>CH3. In each case, the predominant component of bonding is covalent in character and is a result of overlaps between the sp-hybridized singly occupied dangling surface state orbital on the surface carbon and the sp-hybridized orbital on the fragment carbon atom. While the charge transfer contribution to bonding is nearly the same for CH3, CH2, and CH fragments, it is significantly larger for C2H due to a comparatively stable radical orbital on C2H. C2H2 binds to the surface on the di-σ site where both its ends form bonds to the surface atoms. Onefold adsorption to a H-covered surface is predicted to be unstable. The 1:1 CH3 coverage on diamond(111) is highly unstable because of steric repulsions between adsorbate fragments due to their spacial proximity. This finding is supported by a calculation of the cis-trans isomerization energy of di-t-butyl ethylene, including full structure relaxations. At low coverage CH3 can bind on adjacent surface sites by tilting away from one another. The 1:1 coverage for CH2, CH, and C2H fragments is predicted to be stable on this surface.